Crystals | Free Full-Text | Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers
PDF) High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel
Crystals | Free Full-Text | Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers
Probing the Inner Secrets of Nanowires | NIST
High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel | Scientific Reports
Molecular dynamics simulation of cubic InxGa(1-x)N layers growth by molecular beam epitaxy - ScienceDirect
Trace amounts of transition-metal impurities in GaN kill LED efficiency
color online). Defect formation energy of Mg Ga-H i-V N complex in... | Download Scientific Diagram
Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment - ScienceDirect
Defects and Reliability of GaN‐Based LEDs: Review and Perspectives - Buffolo - 2022 - physica status solidi (a) - Wiley Online Library
Crystals | Free Full-Text | Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers
Materials | Free Full-Text | Electric-Field Control of Spin Diffusion Length and Electric-Assisted D’yakonov–Perel’ Mechanism in Ultrathin Heavy Metal and Ferromagnetic Insulator Heterostructure
Two distinctly different types of droop behaviors observed in InGaN QW... | Download Scientific Diagram
Retrospective: 1995-2020 - News
Bright Future of Deep-Ultraviolet Photonics: Emerging UVC Chip-Scale Light-Source Technology Platforms, Benchmarking, Challenges, and Outlook for UV Disinfection | ACS Photonics
Cross-sectioned bright-field TEM images of InGaN/GaN MQWs. The narrow... | Download Scientific Diagram
(a) Light-current dependences in the dc mode for (1-4) an InGaN/GaN LED... | Download Scientific Diagram
Crystals | Free Full-Text | Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers
Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors | npj 2D Materials and Applications
Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes
Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities – topic of research paper in Nano-technology. Download scholarly article PDF and read for free on CyberLeninka open science hub.
Defects and Reliability of GaN‐Based LEDs: Review and Perspectives - Buffolo - 2022 - physica status solidi (a) - Wiley Online Library
Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities | ACS Photonics
MRS Internet Journal Research Nitride Semiconductor
ESD Electrostatic Discharge, Problem, Development, Minimization - Stat-X
Horizontally assembled green InGaN nanorod LEDs: scalable polarized surface emitting LEDs using electric-field assisted assembly | Scientific Reports
